Tegesé saka "저마늄다이오드" ing bausastra Basa Korea

PANGOCAP SAKA 저마늄다이오드 ING BASA KOREA

저	마	늄	다	이	오	드
jeo	ma	nyum	da	i	o	deu

APA TEGESÉ 저마늄다이오드 ING BASA KOREA?

Definisi saka 저마늄다이오드 ing bausastra Basa Korea

Germanium dioda Dioda semikonduktor nggunakake germanium minangka bahan, lan dadi pitunjuk kanggo munculé macem-macem piranti semikonduktor ngganti tabung elektron, lan utamané nyumbang langsung marang panemuan transistor. Gumantung saka aplikasi lan kinerja, ana titik dioda kontak, dioda simpul, lan sateruse.

저마늄다이오드 저마늄을 소재로 사용한 반도체 다이오드이며 전자관을 대신하는 각종 반도체 소자 출현의 실마리가 되었고, 특히 트랜지스터의 발명에 직접적으로 기여하였다. 용도 및 성능에 따라 점접촉 다이오드, 접합 다이오드 등이 있다.

PERTALAN SAKA 저마늄다이오드

Weruhi pertalan saka 저마늄다이오드 menyang 25 basa nganggo Basa Korea pamertal multi basa kita.

pertalan saka 저마늄다이오드 saka Basa Korea menyang basa liyané kang kasuguhaké ing perangan iki kajupuk saka pertalan statistik otomatis; ing ngendhi inti unit pertalan yaiku tembung «저마늄다이오드» ing Basa Korea.

• Pamertal Basa Korea - Basa Cina: 锗二极管
• Pamertal Basa Korea - Basa Spanyol: Diodo de germanio
• Pamertal Basa Korea - Basa Inggris: Germanium diode
• Pamertal Basa Korea - Basa India: जर्मेनियम डायोड
• Pamertal Basa Korea - Basa Arab: الجرمانيوم الصمام الثنائي
• Pamertal Basa Korea - Basa Rusia: Германий диод
• Pamertal Basa Korea - Basa Portugis: Diodo de germânio
• Pamertal Basa Korea - Basa Bengali: জার্মেনিয়াম ডায়োডের
• Pamertal Basa Korea - Basa Prancis: Diode Germanium
• Pamertal Basa Korea - Basa Malaysia: diod germanium
• Pamertal Basa Korea - Basa Jerman: Germaniumdiode
• Pamertal Basa Korea - Basa Jepang: ゲルマニウムダイオード
• Basa Korea: 저마늄다이오드
• Pamertal Basa Korea - Basa Jawa: germanium diode
• Pamertal Basa Korea - Basa Vietnam: Germanium diode
• Pamertal Basa Korea - Basa Tamil: ஜெர்மானிய டையோடு
• Pamertal Basa Korea - Basa Marathi: जर्मेनियम diode
• Pamertal Basa Korea - Basa Turki: Germanyum diyot
• Pamertal Basa Korea - Basa Italia: Germanio diodo
• Pamertal Basa Korea - Basa Polandia: Dioda German
• Pamertal Basa Korea - Basa Ukrania: Германій діод
• Pamertal Basa Korea - Basa Romawi: Diode germaniu
• Pamertal Basa Korea - Basa Yunani: Γερμάνιο δίοδος
• Pamertal Basa Korea - Basa Afrikaans: Germanium diode
• Pamertal Basa Korea - Basa Swedia: Germanium diod
• Pamertal Basa Korea - Basa Norwegia: Germanium diode

BUKU BASA KOREA KAKAIT KARO «저마늄다이오드»

Temukaké kagunané saka 저마늄다이오드 ing pilihan bibliografi iki. Buku kang kakait dening 저마늄다이오드 lan pethikan cekak kang padha kanggo nyediyakaké panggunané ing sastra Basa Korea.

Germanium-Based Technologies: From Materials to Devices

Using the singlemask lay-out of Figure 8.8, one can obtain a gated diode, using the same gate dielectric as for the fabrication of MOS capacitors present on the same mask. The resulting p–n junctions exhibit good characteristics, as can be ...

Cor Claeys, ‎Eddy Simoen, 2011

Measurement of Weak Radioactivity - 117페이지

intrinsic carrier free region created by depletion of charge carriers when a reverse bias is applied to the diode. The higher the reverse bias is, the thicker the radiation sensitive depletion layer will become. When an energetic particle passes ...

Páll Theodórsson, 1996

DC/AC Circuits and Electronics: Principles & Applications - 125페이지

This barrier voltage and the actual forward bias voltage drop of a diode depend upon the material and construction of the diode. The barrier potential and the actual voltage drop in a live circuit of a germanium diode is about 0.2 Fand a silicon ...

Robert J. Herrick, 2003

Germanium-diode Negative-resistance Oscillators - 6페이지

Frederick Albert Kirsten. PART II : NEGATIVE-RTSTSTANCE PROPERTIES OF GERMANIUM DIODES. A. Electrical characteristics. Germanium diodes, operated in the reverse or back voltage direction possess an electrical characteristic of the ...

Frederick Albert Kirsten, 1952

Silicon Germanium Materials & Devices - A Market & ... - 121페이지

To a large extent the SiGe laser driver market will track that of diode lasers.With reference to the companion report, the market for these devices was worth US$ 5.7 billion in 2001. So from this it is a useful approximation to expect that the ...

R. Szweda, 2002

Improved infrared response technique for detecting defects ... - 4페이지

That the above photovoltage effects are responsible for the diode IRR is supported by the following observations made on germanium diodes [6,9] and confirmed in work with silicon. Firstly, no spectral features that can be linked to impurity or ...

Alvin H. Sher, ‎U.S. Atomic Energy Commission, 1975

BASIC ELECTRONICS: DEVICES, CIRCUITS AND IT FUNDAMENTALS

The reverse-bias saturation current for a p-n junction silicon diode is 2 uA at 300 K. Find its ac resistance at 150 mV forward bias. 17. Calculate the static and dynamic resistance of a p-n junction germanium diode at 27°C for an applied forward ...

SANTIRAM KAL, 2009

Lithium-Drifted Germanium Detectors: Their Fabrication and ...

Blankenship, J. L. and Borkowski, C. J. IMPROVED TECHNIQUES FOR MAKING P-I-N DIODE DETECTORS. IRE Trans. Nucl. ... A controlled quantity of lithium was diffused through a l- to 2-micron phosphorus-doped layer on the silicon diode.

I. C. Brownridge, 2012

Germanium diodes - 17페이지

GENERAL PROPERTIES OF THE GERMANIUM DIODE, COMPARED WITH THOSE OF THE THERMIONIC DIODE In comparison with the thermionic diode, the germanium diode has the following advantages: 1 . The absence of a filament is ...

Simon Dirk Boon, 1956

Semiconductor Devices & Circuits - 174페이지

For a what voltage, will the reverse current in a p-n junction germanium diode reach 90 percent of its saturation value at room temperature. (Dec-2002) 2.9 1. A p-n junction diode has at a temperature of 125 °C a reverse saturation current of 30 ...

U.A.Bakshi A.P.Godse, 2008