BUKU BASA POLANDIA KAKAIT KARO «AUTODOPING»
Temukaké kagunané saka
autodoping ing pilihan bibliografi iki. Buku kang kakait dening
autodoping lan pethikan cekak kang padha kanggo nyediyakaké panggunané ing sastra Basa Polandia.
1
BiCMOS Technology and Applications - Strona 71
The buried N+layer is normally formed by ion implantation and drive/anneal of arsenic or antimony, the latter having the advantage of exhibiting less autodoping during epitaxy and subsequent thermal cycles but the disadvantages of having ...
2
Microelectronic Materials and Processes - Strona 51
31 Effect of total pressure on vertical arsenic autodoping. Autodoping is significantly reduced by decreased total pressure only in the case of arsenic. Figure 32 [38] shows the lateral autodoping peak concentration of 2 um epi layers, grown at ...
3
Silicon Processing - Strona 154
Prebake Effects It has been shown [7] that most of the vapor phase autodoping occurs during the thermal cycle prior to the epitaxial deposition (that is, during prebake). The kinetics of the vapor phase autodoping process can be quantitatively ...
4
Impurity Doping Processes in Silicon - Strona 297
In a system which is otherwise clean, the major sources of unwanted impurity are the silicon source, the hydrogen carrier gas, and autodoping from the substrate. Silicon sources are commercially available which are guaranteed to grow 1000 ...
5
Chemical Vapor Deposition: Proceedings of the Fourteenth ...
CONTROLLING ARSENIC AUTODOPING VIA CLUSTERED HF PRE-CLEAN AND LOW-TEMPERATURE EPITAXIAL DEPOSITION CAP R.L. Wise, F.S. Johnson, D.F. Frystak, K.E. Violette, N.E. Tidwell, and E. Forest" Semiconductor Process ...
Mark Donald Allendorf, Claude Bernard, 1997
6
Semiconductor Processing: A Symposium - Wydanie 850 - Strona 41
This indicates that the lateral autodoping is controlled by the evaporated dopant diffusing along the substrate surface in a stagnant boundary layer. The turbulent gas flow in the reactor does not cover the region very near the wafer surface.
7
Emerging Semiconductor Technology: A Symposium
Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed. KEYWORDS: silicon epitaxy, autodoping, channel mobility, buried layers A low temperature procedure for the ...
Dinesh C. Gupta, Paul H. Langer, 1987
8
Materials and Process Characterization: VLSI Electronics ... - Strona 84
Conditions for vertical and lateral autodoping. A: Impurity is picked up by gas steam; no autodoping. B; Vertical autodoping. C. Lateral autodoping. (From Pogge [5]. Reprinted with permission of North-Holland Publ., Amsterdam.) reduce n-type ...
Norman G. Einspruch, Graydon B. Larrabee, 2014
9
Semiconductor Silicon 2002: Proceedings of the Ninth ... - Strona 682
THE CONTROL OF BORON AUTODOPING DURING DEVICE PROCESSING FOR P/P+ EPI WAFERS WITH NO BACK-SURFACE OXIDE SEAL M.J. Binns1, S. Kommu1, M.R. Seacrist1 R.W. Standley1, R. Wise2, D.J. Myers2, D. Tisserand2 ...
Howard R. Huff, L. Fabry, S. Kishino, 2002
10
Introduction to Microfabrication - Strona 73
Autodoping depends on the volatility of dopants, with antimony (Sb) giving the least (the lowest vapor pressure, with arsenic and boron somewhat higher, and phosphorus the highest). Autodoping comes both from substrate itself and from any ...
BABAGAN WARTA KANG NGLEBOKAKÉ ARAN «AUTODOPING»
Weruhi yèn pawarta nasional lan internasional wis ngomongaké lan kepriyé aran
autodoping digunakaké ing babagan warta iki.
Marco Pantani, le nuove inchieste e quell'ematocrito fuorilegge già …
... l'atleta, e non all'“autodoping” di quest'ultimo, che in Italia è punibile solo dal 2000: dunque, nel 1995, “il fatto non era previsto dalla legge come reato”). «Il Fatto Quotidiano, Okt 14»
Marco Travaglio sul Fatto Quotidiano: "Pantani, ma quale complotto"
... e non all' “autodoping” di quest'ultimo, che in Italia è punibile solo dal 2000: dunque, nel 1995, “il fatto non era previsto dalla legge come reato”). L'indagine e ... «Blitz quotidiano, Okt 14»
SemiGen PIN Diodes Offer Low Capacitance And Resistance Plus …
These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. «RF Globalnet, Mar 14»
Diário de Classe: Doping no Processo Penal ou Complexo de …
Logo, Autodoping se vincula às escolhas táticas dos jogadores processuais, ou seja, a escolha por não apresentar uma prova, deixar de formular alguma ... «Consultor Jurídico, Jan 14»
Sportski lopovi i žandari
Za vreme Olimpijade u Minhenu 1972. finski dugoprugaš Lase Viren, pobednik u trkama na 5 i 10 km, bio je optužen za autodoping sopstvenom krvlju, ali ništa ... «Vreme, Jul 09»
