말레이어 사전에서 germanium 의 정의
게르마늄 비금속 원소, 반도체, 촉매 및 트랜지스터 소자 제조에 사용됩니다. germanium unsur bukan logam, bersifat semikonduktor, digunakan sbg mangkin dan utk membuat peranti transistor.
말레이어 사전에서 «germanium» 의
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한국어 사전에서
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«GERMANIUM» 관련 말레이어 책
다음 도서 목록 항목에서
germanium 의 용법을 확인하세요.
germanium 에 관련된 책과 해당 책의 짧은 발췌문을 통해 말레이어 서적에서 단어가 사용되는 맥락을 제공합니다.
1
Silicon-germanium Heterojunction Bipolar Transistors
A treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a technology that is expected to revolutionise communications.
John D. Cressler, Guofu Niu, 2002
2
Germanium-Based Technologies: From Materials to Devices
The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells.
Cor Claeys, Eddy Simoen, 2011
3
Silicon-Germanium Strained Layers and Heterostructures: ...
Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in ...
M. Willander, Suresh C. Jain, 2003
4
Extended Defects in Germanium: Fundamental and ... - Halaman 15
Fundamental and Technological Aspects Cor Claeys, Eddy Simoen. Slip (or glide) during plastic deformation can occur between the {111} planes 1 and 2 in Fig. 1.9 or between planes 2 and 3. In the latter case, three times more bonds have to ...
Cor Claeys, Eddy Simoen, 2008
5
Epitaxial Growth of Nitrides on Germanium
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial ...
6
Phase Equilibrium Studies of Germanium and Silicon at ...
Extension of this work into the Ge-Si system enabled onstruction of a 150C isothermal section and a 10 mole % Si isoplethal section through the P-T-X-volume for the system. (Author).
7
Silicon Germanium: Technology, Modeling, and Design - Halaman 28
Technology, Modeling, and Design Raminderpal Singh, Modest M. Oprysko, David Harame. shrinkage for the SiGe layers used in this experiment would have predicted about 90 meV (75 meV for 10% Ge [24]), but poor material quality and ...
Raminderpal Singh, Modest M. Oprysko, David Harame, 2004
