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1
DC Flux Parametron: A New Approach to Josephson Junction Logic
circuits, Esaki diode circuits require that some special method to be incorporated
for obtaining a unilateral characteristic for the transmission and amplification of
digital signals. This situation is completely analogous to the parametron which
we ...
Kia Fock Loe, Eiichi Gotō, 1986
2
Quantum Flux Parametron: A Single Quantum Flux ...
3.1 Esaki Diode Pair The circuits described so far are not suitable for building
logic gates because they give little or no signal amplification. The amplifying
circuit element that is used throughout this book works on the parametron [
Goto59] ...
Willy Hioe, Eiichi Gotō, 1991
3
Solid-State Physics, Fluidics, and Analytical Techniques in ...
FIGURE 4.44 The tunnel or Esaki diode. For explanation, see text. energy band
311g11m€111 10 519316 negafive d1ffe1e11' the International Union of Pure
and Applied Physics. This tial resistance as illustrated in Figure 4.44. coincided
with ...
4
Principles of Electron Tunneling Spectroscopy: Second Edition
2.3.4 pn junction (Esaki diode)—direct case and the Si–Ge diode We have
already seen, in Fig. 1.4, the I–V curves observed in pn junctions by Esaki (1958),
where we pointed out that the kinks observed at the low temperature occur at
zone ...
5
Emerging Memories: Technologies and Trends
The original negative resistance device was the Esaki diode. The negative
resistance I-V curve for the Esaki tunnel diode is shown in Figure 4.9. The
characteristic curve shows the current first increasing with increasing applied
voltage to a ...
6
Encyclopedia of World Scientists
This work resulted in his discovery of the tunnel diode, otherwise known as the
Esaki diode. It also resulted in the 1973 Nobel Prize in physics, which he shared
with Ivar Giaevar and Brian Josephson. Esaki was born on March 12, 1925, ...
7
Routledge Diccionario Técnico Inglés
... telecom, tv light-emitting diode iLED); - de enclavamiento por corriente
continua m electron DC clamp diode; - de enfoque in ing elec, instr, tv focusing
diode; - epitaxial planar m electron planar epitaxial diode; - Esaki in electron
Esaki diode, ...
8
Transport in Nanostructures
In the late 1950s, Esaki [3] proposed the so-called Esaki diode, in which negative
differential resistance (NDR) is observed in the I—Vcharacteristics of heavily
doped p—n diodes due to interband Zener tunneling between the valence and ...
David K. Ferry, Stephen M. Goodnick, Jonathan Bird, 2009
9
Microwave Active Devices Vacuum and Solid State
14. Hines, M.E., High frequency negative resistance circuit principles for Esald
diode applications, Bell Syst. Tech J., 39, pp. 477-513, 1960. 15. Burrus, C.A.,
and R. Tirambarullo, A millimetre-wave Esaki diode amplifier, Proc. IRE, 49, pp.
10
Elements of Solid State Physics
The main features of the forward-biased tunnel diode (the Esaki diode) are that
the tunnel current passes through a sharp maximum and then drops to zero [see
Fig. 9.18(e)]. The current is maximum when the forward voltage is about (8?
WIADOMOŚCI, KTÓRE ZAWIERAJĄ SŁOWO «ESAKI DIODE»
Sprawdź, o czym dyskutuje się w prasie krajowej i zagranicznej oraz jak jest stosowane słowo
Esaki diode w wiadomościach.
Semiconductor nanowires Sn-seeded Esaki diode
Metal seed particles have been regularly used in the fabrication of semiconductor nanowires, as they provide a means to control the nanowire ... «Nature.com, Cze 15»
Honoring Robert Dennard, the Father of DRAM
There was this new thing, the tunnel diode, or the Esaki diode, that had been invented. We pursued a lot of different alternatives with some ... «PC Magazine, Mar 14»
The editors of Wonder of Nanotechnology are:
He is known for his invention of the Esaki diode, which exploited that phenomenon. He also pioneered the development of the semiconductor ... «SPIE Newsroom, Lis 13»
'Wonder of Nanotechnology' details research enabling nanoscale …
He is known for his invention of the Esaki diode, which exploited that phenomenon. He also pioneered the development of the semiconductor ... «Phys.Org, Lis 13»
New semiconductor research may extend integrated circuit battery …
... low-power electronic devices are also detailed in the paper, "Benchmarking and Improving III-V Esaki Diode Performance with a Record 2.2 ... «Phys.Org, Sty 13»
IEDM 2012: Late papers on silicon photonics, large TFTs, III-V devices
(#27.7, "Benchmarking and Improving III-V Esaki Diode Performance With a Record 2.2 MA cm2 Current Density to Enhance TFET Drive ... «ElectroIQ, Gru 12»
Nanotechnology: a worldwide snapshop.
... traits have heavily contributed to the world's nanotechnology progress with the invention of the Esaki Diode (Leo Esaki, Nobel prize in 1973), ... «Nanotechnology News, Kwi 08»
