CĂRȚI ÎN ENGLEZĂ ÎN LEGĂTURĂ CU «N-TYPE»
Descoperă întrebuințarea
n-type în următoarea selecție bibliografică. Cărți în legătură cu
n-type și extrase din aceasta pentru a furniza contextul de întrebuințare al acestuia în literatura Engleză.
1
AFM Investigation of One-dimensional Self-assembly of
N-
type ...
Aniket Datar. usually a critical step towards successful assembly of well-defined
structures (e.g., nanowires). In general, a 'poor' solvent (which has limited
solubility for the molecules due to the weak solvent-molecule interaction) is
suited for ...
2
Characterization of
N-
type Bismuth-tellurium-selenium and ...
In their study, Zou D. et. al [31], investigated the effect on thermal conductivity of
point defects, dislocations and silicon dopants in a n-type wurtzite GaN
semiconductor. Within their results, a reduction of the thermal conductivity was
observed ...
Vianett Berenice Munoz Estrada, 2007
3
An
N-
type Tunable Two-dimensional Ferromagnetic Semiconductor
3. Theory. of. ferromagnetic. (III,Mn)V. semiconductors. 3.1 Origin of
ferromagnetism Ferromagnetism is almost always due to the interplay between
the spin degree of freedom, the Coulomb interaction between charges and the
Fermi statistics.
4
Synthesis and Characterization of Perfluoroaryl Derivatized ...
Device Fabrication and Testing. FET devices: FETs were fabricated using heavily
doped n-type silicon wafers as the gate, and thermally oxidizing the surface to
form a 1000 A silicon dioxide dielectric layer. Gold source 49.
5
Fundamentals of Microfabrication: The Science of ...
ing a reverse bias across a p-n junction, driving the p-type layer cathodic and the
n-type layer anodic. Etch rates up to 10 |im/min for the n-type material and a high
resolution etch stop render this an attractive potential micromachining process.
6
The Corsini Encyclopedia of Psychology and Behavioral Science
At the time of this writing. there are two main accepted mechanisms of potassium-
channel inactivation: N-type and C-type tfor review see Rasmusson et aL. l998l.
N-type inactivation occurs by a sort of ball-and-chain mechanism tHoshi. Zagotta
...
W. Edward Craighead, Charles B. Nemeroff, 2002
7
Electronic Devices: Systems and Applications
N-type materials are formed by doping a valent semiconductor material with a
valent material. P-type materials are formed by doping a valent semiconductor
material with a valent material. 3. The doping atoms for N-type materials are
called ...
Robert Diffenderfer, 2005
8
Handbook of Compound Semiconductors: Growth, Processing, ...
The heavily-doped ternary layer, formed by either alloy regrowth, creating a
shallow diffusing zone, ion implantation, or heavily-doped epitaxially-grown layer
, provides significant advantages over highly-doped p-type and n-type InP,
because ...
Paul H. Holloway, Gary E. McGuire, Gary E Haber, 2008
9
Electronic Devices and Integrated Circuits
What is the name of the impurity that makes semiconductor n-type? What are
minority carriers in n-type and in p-type? Why? What are the impurities that make
a semiconductor p-type? What are majority and minority charge carriers in p-type
...
10
High Temperature Electronics
barrier heights and heats of formation for transition metal silicides on n-type
silicon [Andrews and Phillips 1975]. Unfortunately, sufficient information is not
available for silicide and carbide contacts to SiC. It might be expected that a
similar ...
F. Patrick McCluskey, Thomas Podlesak, Richard Grzybowski, 1996
ȘTIRI NOI CARE INCLUD TERMENUL «N-TYPE»
Află ce ziare naționale și internaționale au scris despre și cum este întrebuințat termenul
n-type în contextul următoarelor știri.
AlN Schottky barrier diode makes its debut
Electronic devices such as diodes require n-type conductivity, and this has been realised previously by either using oxygen impurities or ... «Compound Semiconductor, Iul 15»
Transparent conductive oxides and wafer bonding of III-Vs and silicon
The III-V material consisted of heavily n-type (100) gallium arsenide (GaAs) substrate, 500nm n-type gallium indium phosphide (Ga0.5In0.5P) ... «Semiconductor Today, Iul 15»
Limit for industrial c-Si solar cells reached in 2030: what next?
... be entered by n-type mono in the coming years. Until 2025/2030 optimisation of G1 (also reduction of CTM losses) will dominate the market. «PV-Tech, Iul 15»
Mid-infrared interband cascade lasers on indium arsenide substrate
The laser diode heterostructures were grown on n-type InAs substrate using molecular beam epitaxy (MBE). The separate confinement and ... «Semiconductor Today, Iul 15»
LG Launches Enhanced NeON??? 2 Solar Panel In United States
This new series builds on the success of LG's award-winning 60-cell Mono X NeON that uses LG's N-Type double-sided cell structure that ... «Consumer Electronics Net, Iul 15»
LG Solar utilizes ASYS technology
To date, dual lane metallization lines have been installed at all LG n-type manufacturing sites in Korea. The initial Asys metallization lines at LG ... «evertiq.com, Iul 15»
The Compositional XPS Analysis of a Cu(In,Ga)Se2 Solar Cell …
A thin n-type CdS layer forms a p-n junction, with a p-type CIGS film acting as a sunlight absorber layer. Manufacturing methods commonly ... «Azom.com, Iul 15»
World's largest bifacial PV plant nears completion in Chile
The facility contains 9,180 bifacial PV n-type silicon modules with a nominal peak power of 270Wp each containing BISoN solar cells produced ... «PV-Tech, Iul 15»
Monocrystalline market momentum assured
Lei also discusses the recent launch of a high-efficiency n-type monocrystalline bifacial module using PERC (passivated emitter rear cell) ... «PV-Tech, Iul 15»
Mine Pollution
Arsenic is a common n-type dopant in semi-conductor electronic devices, and the optoelectronic compound gallium arsenide is the most ... «AllAfrica.com, Iul 15»
