КНИГИ НА АНГЛИЙСКИЙ ЯЗЫКЕ, ИМЕЮЩЕЕ ОТНОШЕНИЕ К СЛОВУ «DRIFT TRANSISTOR»
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drift transistor в следующих библиографических источниках. Книги, относящиеся к слову
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24 GHz Multi-functional MMICs Using SiGe HBTs
There are basically two different types of transistors using SiGe alloy in the base
layer - the “SiGe Drift Transistor” and the “SiGe HBT”. In the base layer of the “
Drift Transistor” the Germanium content is graded starting at the emitter-base ...
2
Modern Dictionary of Electronics
... vacuum tube. drift speed — Average speed at which electrons or ions progress
through a medium. drift transistor — A type of transistor manufactured with a
variable-conductivity base region. Such a base sets up an electric field that
speeds ...
3
Compact Hierarchical Bipolar
Transistor Modeling with Hicum
The electron density disappears at x = w B for vc → ∞, i.e. vdiff/vc = 0. The curves
with ζ = 0 correspond to a diffusion transistor in which n decreases linearly from
xe to xc, while ζ = 8 corresponds to a drift transistor in which the electron density ...
4
French Dictionary of Information Technology: French/English, ...
... transhorizon adj tropospheric scatter transimpédance /"mutual impedance
transinformation /' moyenne average transinformation transistor m transistor; ~ à
barrière superficielle surface-barrier transistor; ~ à champ interne drift transistor; ...
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Fundamentals Of Semicon Dev
These devices include the drift transistor or the graded base transistor, •riju«ion
transistor, P-N junction tunnel diode, MIS tunnel diode, laser diode, LEDs and the
TRIAC. We lso discuss the effects of non-uniform doping concentrations and the ...
6
RF and Microwave Passive and Active Technologies
A drift transistor made with dopant grading suffers from the fact that part of the
base must be lightly doped (at the collector side), thus bearing a large base
resistance. An alternative school of SiGe HBT places a fixed Ge content in the
base, ...
Mike Golio, Janet Golio, 2007
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The Electrical Engineering Handbook
0 wC log (N/cm−3) 1019 1020 wBm Ge SIC x jE x jC 0.2 0.3 1018 1017 NC0.4 xc
X/μm (A) Si and SiGe-Drift Transistor 0 NC 1017 1018 1019 1020 wC xjE xjC 0.2
0.3 0.4 X/μm log (N/cm−3) w Bm Ge (B) HBT Transistor FIGURE 5.6 Typical ...
8
Physics of Semiconductor Devices
... 484, 485, 487, 489, 495, 499, 500, 502, 503, 505 Drift transistor 248 Drift
velocity 28, 316, 317, 381, 382, 391,396, 405, 406, 510, 512, 514, 519 DSP 712
dV/dt triggering 562, 571 Dynamic random-assess memory 349 Dynamic range
671, ...
Simon M. Sze, Kwok K. Ng, 2006
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RF and Microwave Semiconductor Device Handbook
A drift transistor made with dopant grading suffers from the fact that part of the
base must be lightly doped (at the collector side), thus bearing a large base
resistance. An alternative school of SiGe HBT places a fixed Ge content in the
base, ...
10
A History of the World Semiconductor Industry
4(i A further modification of the germanium alloy process was the introduction of
the alloy drift transistor. This device had a non-uniform base resistivity, producing
a field which swept the charge carriers from emitter to collector at a higher speed
...
