ЧТО ОЗНАЧАЕТ СЛОВО 저마늄다이오드
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Значение слова 저마늄다이오드 в словаре корейский языка
Гермиевые диоды Это полупроводниковый диод с использованием германия в качестве материала, и он стал ключом к появлению различных полупроводниковых приборов, заменяющих электронную трубку, в особенности способствуя прямому изобретению транзистора. В зависимости от применения и производительности, существуют точечные контактные диоды, соединительные диоды и т. Д. 저마늄다이오드
저마늄을 소재로 사용한 반도체 다이오드이며 전자관을 대신하는 각종 반도체 소자 출현의 실마리가 되었고, 특히 트랜지스터의 발명에 직접적으로 기여하였다. 용도 및 성능에 따라 점접촉 다이오드, 접합 다이오드 등이 있다.
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исходное определение слова «저마늄다이오드» в словаре корейский языка.
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КНИГИ НА КОРЕЙСКИЙ ЯЗЫКЕ, ИМЕЮЩЕЕ ОТНОШЕНИЕ К СЛОВУ «저마늄다이오드»
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저마늄다이오드 в следующих библиографических источниках. Книги, относящиеся к слову
저마늄다이오드, и краткие выдержки из этих книг для получения представления о контексте использования этого слова в литературе на корейский языке.
1
Germanium-Based Technologies: From Materials to Devices
Using the singlemask lay-out of Figure 8.8, one can obtain a gated diode, using the same gate dielectric as for the fabrication of MOS capacitors present on the same mask. The resulting p–n junctions exhibit good characteristics, as can be ...
Cor Claeys, Eddy Simoen, 2011
2
Measurement of Weak Radioactivity - 117페이지
intrinsic carrier free region created by depletion of charge carriers when a reverse bias is applied to the diode. The higher the reverse bias is, the thicker the radiation sensitive depletion layer will become. When an energetic particle passes ...
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This barrier voltage and the actual forward bias voltage drop of a diode depend upon the material and construction of the diode. The barrier potential and the actual voltage drop in a live circuit of a germanium diode is about 0.2 Fand a silicon ...
4
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Frederick Albert Kirsten, 1952
5
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6
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Alvin H. Sher, U.S. Atomic Energy Commission, 1975
7
BASIC ELECTRONICS: DEVICES, CIRCUITS AND IT FUNDAMENTALS
The reverse-bias saturation current for a p-n junction silicon diode is 2 uA at 300 K. Find its ac resistance at 150 mV forward bias. 17. Calculate the static and dynamic resistance of a p-n junction germanium diode at 27°C for an applied forward ...
8
Lithium-Drifted Germanium Detectors: Their Fabrication and ...
Blankenship, J. L. and Borkowski, C. J. IMPROVED TECHNIQUES FOR MAKING P-I-N DIODE DETECTORS. IRE Trans. Nucl. ... A controlled quantity of lithium was diffused through a l- to 2-micron phosphorus-doped layer on the silicon diode.
9
Germanium diodes - 17페이지
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10
Semiconductor Devices & Circuits - 174페이지
For a what voltage, will the reverse current in a p-n junction germanium diode reach 90 percent of its saturation value at room temperature. (Dec-2002) 2.9 1. A p-n junction diode has at a temperature of 125 °C a reverse saturation current of 30 ...
U.A.Bakshi A.P.Godse, 2008
