与 «ACCEPTOR IMPURITY»相关的英语书籍
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acceptor impurity的用法。与
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1
Electron Dev & Cir-Prin & App
Because each trivalent atom crcce/rts an electron, this type of impurity is known
as Acceptor impurity. Addition of acceptor impurity creates additional holes in
intrinsic semiconductor, resulting inp-type semiconductor (p stands for positive ...
2
Electronics Devices And Circuits
(c) If acceptor impurity is added to pure Ge to the extent of 1 impurity atom per 2 x
107 Ge atoms. Find the resistivity. Ans: 4.46 Q-cm; 1.86 Q-cm; 1.575 Q-cm 3. (a)
Find the resistivity of intrinsic Si at 300°k. It is given that n¡ at 300°k in Si is 1.5 x ...
The concentration of donor impurity is ND and that of acceptor impurity is NA .
Each donor actom donates one electron and as it looses electron it becomes
positively charged ion, due to the process of ionization. Thus assuming ionization
of all ...
A.P.Godse, U.A.Bakshi, 2009
The concentration of donor impurity is ND and that of acceptor impurity is NA . .
Each donor atom donates one electron and as it looses electron it becomes
positively charged ion, due to the process of ionization. Thus assuming ionization
of all ...
A.V.Bakshi U.A.Bakshi A.P.Godse, 2008
5
Nuclear Medicine Instrumentation
Pure silicon is shown in Figure 3-1a. The addition of a donor impurity such as
phosphorus adds an extra electron, creating an n-type semiconductor (Fig. 3-1b).
The addition of an acceptor impurity such as boron leaves a hole in the electron ...
6
Getting to Know Semiconductors
With the acceptor impurity being introduced, the number of free electrons
decreases abruptly. Thus, introducing an acceptor impurity actually compensates
the presence of the donor impurity. It would not matter at all if the amount of deep
...
M. Levinshtein, G. Simin, 1992
Acceptor impurity levels The band theory explanation of p-type semiconductors is
shown in Figure 2.60. The acceptor impurity level allows electrons to leave the
valence band at relatively low temperatures. Electrons which end up in the ...
Ken Gadd, John S. Holman, 1995
8
Physics and Engineering of Radiation Detection
D.1 Doping with Acceptor Impurity If the element added has an electron less than
the one in the semiconductor, it can either form one bond less than the
semiconductor atoms or captures an electron from the semiconductor lattice to fit
in the ...
9
Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic ...
Increasing the acceptor impurity concentration, increasing the simulated
temperature, or decreasing the P(O2) compared to the situation in Fig. 3 tends to
increase the predicted magnitude of the potential difference between interface
and bulk, ...
10
Basics Of Electronics Engineering
Such an impurity is called acceptor impurity. Consider the formation of p-type
material by adding gallium (Ga) into silicon (Si). The gallium atom has three
valence electrons. So gallium atom fits in the silicon crystal in such a way that its
three ...
U.A.Bakshi A.P.Godse, 2008
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acceptor impurity在以下新条目的上下文中是如何使用的。
Indium tin oxide cladding for semi-polar InGaN laser diodes
... cladding is the low hole carrier density in p-AlGaN due to the poor doping capability of even the best acceptor impurity element (magnesium). «Semiconductor Today, 四月 15»
Unified model solves two problems in ZnO
At liquid-helium temperatures, they observed a series of sharp IR absorption peaks that arise from an acceptor impurity. In analogy with a ... «nanotechweb.org, 十一月 11»
