与 «EPITAXIAL»相关的葡萄牙语书籍
在以下的参考文献中发现
epitaxial的用法。与
epitaxial相关的书籍以及同一来源的简短摘要提供其在 葡萄牙语文献中的使用情境。
1
Low Dimensional Structures Prepared by
Epitaxial Growth or ...
Proceedings of the NATO Advanced Research Workshop, Ringberg in Rottach Egern, Germany, February 20--24, 1995
K. Eberl, Pierre M. Petroff, Piet Demeester, 1995
2
Growth and Properties of Ultrathin
Epitaxial Layers
This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.
D. A. King, D. P. Woodruff, 1997
3
Multiscale Modeling in
Epitaxial Growth
Today a hierarchy of models has been investigated to describe epitaxial growth:
From fully atomistic models, via semi-discrete step flow models to continuum
models for the height of the growing film. The main challenge in modeling
epitaxial ...
4
Atomistic Aspects of
Epitaxial Growth
Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001
5
Lateral Alignment of
Epitaxial Quantum Dots
This book describes the full range of possible strategies to laterally align self-assembled quantum dots on a substrate surface, starting from pure self-ordering mechanisms and culminating with forced alignment by lithographic positioning.
6
Epitaxial Oxide Thin Films III:
This book focuses on the fundamental issues of oxide epitaxy, microstructural evolution in epitaxy, and physical properties of epitaxial oxide thin films and how these issues relate to device applications.
C.-B. Eom, C. Foster, M. E. Hawley, 1997
7
Epitaxial Silicon Technology
Epitaxial Silicon Technology
9
Epitaxial Growth of Nitrides on Germanium
A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates—and solid phase epitaxy of germanium on silicon substrates—this work presents a simple but effective method for growing ...
10
Epitaxial Microstructures
Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures.
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Ascatron and LPE to Develop Epitaxial Material for Power Devices …
Ascatron AB, a supplier of epitaxy material based in Stockholm, Sweden, and LPE SpA, a producer of epitaxy reactors for power electronics, have entered into a ... «CompoundSemi Online, 十月 15»
SDK to Offer SiC Epitaxial Wafers with Very Low Defect Density
TOKYO, Oct 2, 2015 - (ACN Newswire) - Showa Denko (SDK) (TOKYO: 4004) has developed a new grade of silicon carbide (SiC) epitaxial wafers for power ... «ACN Newswire, 十月 15»
Research delivers insight into the Chinese LED epitaxial chip …
Market Research Report on Global and Chinese LED epitaxial chip Industry, 2009-2019 is a professional and in-depth market survey on Global and Chinese ... «WhaTech, 九月 15»
IBM Demos III-V FinFETs on Silicon
"Our method uses confined epitaxial overgrowth--or CELO--which results in InGaAs epitaxial structures with very low defectivity, which fulfills the requirements of ... «EE Times, 六月 15»
Inserting hydrogen between SiC and graphene boosts carrier mobility
However, the interfacial layer between graphene and SiC reduces the conductivity of the material, limiting applications of pristine epitaxial graphene in high ... «Compound Semiconductor, 六月 15»
Researchers synthesize new thin-film material for use in fuel cells
Synthesis of epitaxial crystals (about 100 nm long) of Bi2Pt2O7 pyrochlore. A pulsed laser deposition step is followed by a post-growth anneal in air. Credit: A. «Phys.Org, 三月 15»
Separation-rate improvement of epitaxial lift-off for III-V solar cells
A method known as epitaxial lift-off (ELO) enables substrate reuse, which enhances affordability. However, the technique relies on hydrofluoric acid (HF) ... «SPIE Newsroom, 二月 15»
More absorbent 2D stacks through layer transfer rather than epitaxy
The epitaxial MoS2 and WS2 heterostructure was produced through chemical vapor deposition (CVD) in a tube furnace with sulfur and molybdenum and ... «Semiconductor Today, 十二月 14»
Stacking two-dimensional materials may lower cost of …
The paper, "Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures," was published ... «Phys.Org, 十二月 14»
Van der Waals epitaxy of GaN and blue LEDs
IBM T. J. Watson Research Center in the USA has developed a van der Waals epitaxial (vdWE) method for the growth of gallium nitride (GaN) on graphene that ... «Semiconductor Today, 十月 14»
