Meaning of "霍耳效应" in the Chinese dictionary

PRONUNCIATION OF 霍耳效应 IN CHINESE

霍	耳	效	应
huò	ěr	xiào	yīng

WHAT DOES 霍耳效应 MEAN IN CHINESE?

Hall Effect

Hall effect refers to the phenomenon that when the solid conductor is placed in a magnetic field and the current passes, the charge carrier in the conductor is biased by the Lorentz force, and then the voltage (Hall voltage) is generated. The electric field force caused by the voltage will balance the Lorentz force. By the polarity of the Hall voltage, it is confirmed that the current inside the conductor is caused by the movement of the negatively charged particles (free electrons). The Hall effect was discovered in 1879 by Edwin Herbert Hall. In addition to the conductor, the semiconductor can produce Hall effect, and the semiconductor Hall effect is stronger than the conductor. ...

Definition of 霍耳效应 in the Chinese dictionary

The Hall effect places a current-carrying metal or semiconductor sample in a magnetic field perpendicular to the direction of the current, creating a potential difference between the two sides of the sample, both perpendicular to the current direction and perpendicular to the magnetic field. The Hall effect of the semiconductor under the same conditions than the metal significantly.

TRANSLATION OF 霍耳效应

Find out the translation of 霍耳效应 to 25 languages with our Chinese multilingual translator.

The translations of 霍耳效应 from Chinese to other languages presented in this section have been obtained through automatic statistical translation; where the essential translation unit is the word «霍耳效应» in Chinese.

• Chinese: 霍耳效应
• Translator Chinese - Spanish: Hall Effect
• Translator Chinese - English: Hall Effect
• Translator Chinese - Hindi: हॉल प्रभाव
• Translator Chinese - Arabic: تأثير هول
• Translator Chinese - Russian: Эффект Холла
• Translator Chinese - Portuguese: Efeito Hall
• Translator Chinese - Bengali: হল প্রভাব
• Translator Chinese - French: Effet Hall
• Translator Chinese - Malay: Kesan Hall
• Translator Chinese - German: Hall-Effekt-
• Translator Chinese - Japanese: ホール効果
• Translator Chinese - Korean: 홀 효과
• Translator Chinese - Javanese: Hall efek
• Translator Chinese - Vietnamese: Hiệu ứng Hall
• Translator Chinese - Tamil: ஹால் எபெக்ட்
• Translator Chinese - Marathi: हॉल प्रभाव
• Translator Chinese - Turkish: Hall Etkisi
• Translator Chinese - Italian: Effetto Hall
• Translator Chinese - Polish: Halla
• Translator Chinese - Ukrainian: Ефект Холла
• Translator Chinese - Romanian: Efect Hall
• Translator Chinese - Greek: Φαινόμενο Hall
• Translator Chinese - Afrikaans: Hall-effek
• Translator Chinese - Swedish: Halleffekt
• Translator Chinese - Norwegian: Hall Effect

8 CHINESE BOOKS RELATING TO «霍耳效应»

Discover the use of 霍耳效应 in the following bibliographical selection. Books relating to 霍耳效应 and brief extracts from same to provide context of its use in Chinese literature.

磁性材料 - 第 141 页

0 霍耳电动势项 EH :如式( 4 - 2 )所示,一般情况下,与磁场强度成正比,称为霍耳效应(与/ XH 成正比)。 0 磁致电阻电动势项 Em :与 H ( I · H )成正比,称为磁致电阻效应。下面,分别针对霍耳效应和磁致电阻效应加以说明。( 1 )霍耳效应在与电流垂直的方向 ...

田民波, 2001

邮票上的物理学史 - 第 387 页

霍耳效应是一种磁电效应。将通有电流的导体或半导体置于与电流方向垂直的磁场中,在垂直于电流和磁场的方向上会产生一横向电场。从霍耳系数的正负和大小可以判断载流子的类型和浓度。霍耳系数与载流子的浓度成反比,半导体的霍耳系数比金属 ...

秦克诚, 2005

大学基础物理学 - 第 415 页

在磁场中的载流导体上出现横向电势差的现象是 24 岁的研究生霍尔( Edwin H . Hal )在 1879 年发现的,现在称之为霍尔效应,式( 14.28 )给出的电压就叫霍尔电压。当时还不知道金属的导电机构,甚至还未发现电子。现在霍尔效应有多种应用,特别是用于 ...

张三慧, 2003

量子霍尔效应

本书主要内容有整数、分数量子霍尔效应的基本概念,实验事实,解释该效应的基本理论以及最新进展等。

陈颖健, 1993

大学物理学 (第二版) 思考题解答 - 第 135 页

... 两导体所受的安培力的方向也相同。如果导体不是直线状导体,可把导体分为电流元,作与上类似的分析。思考题 m) 7 · 9 解答用图 9 图) (在霍尔效应中,当磁场方向和电流方向一定时,霍尔元件(导体或半导体)上霍尔电压的正负与载流子的种类有关系。

邓新元, 2004

我们生活在磁的世界里: 物质的磁性和应用 - 第 84 页

例如,一些半导体材料在极低温度、极强磁场和特殊结构条件下,表示霍尔效应的特征曲线会出现多个不连续的平台。这种现象称为量子霍尔效应,其特征是在磁场增强时·在跟电流和磁场都垂直的方向会出现一段一段的霍尔电阻(霍尔电势)不改变的平台。

李国栋, 2000

电子线路及应用 - 第 137 页

1002 杜尔元件 L4 尔元件的构成与命名方法霍尔元件就是利用霍尔效应制作的半导体器件。尽管如上所说,金属薄片也具有霍尔效应,但其灵敏度很低,不宜制作霍尔元件。霍尔元件一般由半导体材料制成,且大都采用 N 型锗(使)、锑化铝( I 心 b )和砷化铅( ...

张洪润, ‎吕泉, ‎吴建平, 2005

电力设备的在线监测与故障诊断 - 第 24 页

3 ·霍尔电流传感器霍尔电流传感器是利用半导体材料的磁敏特性,通过测量其磁感应强度,推算出待测的电流值。霍尔器件主要是利用霍尔效应制成的霍尔器件。当将霍尔器件置于磁场 B 中,如图 2 - 14 ( a )所示,在霍尔器件的一对侧面( " , b )上通以控制 ...

王昌长, ‎李福祺, ‎高胜友, 2006