«DOPANT»に関連する英語の本
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1
Si front-end processing: physics and technology of ...
94305 ABSTRACT As semiconductor device dimensions continue to decrease,
the main challenge in the area of junction formation involves decreasing the
junction depth while simultaneously increasing the active dopant concentration.
2
Optical Fiber Fusion Splicing
the local dopant concentration. When an optical fiber is heated to high
temperatures, such as those encountered during fusion splicing, the dopants in
the fiber can diffuse through the glass host material, thus changing the optical
and ...
3
Scanning-probe Study of
Dopant Charging in a Semiconductor ...
Although dopant properties are well understood with respect to the bulk, the study of configurations of dopants in small numbers is an emerging field[19, 30].
4
Atomistic Simulations of the Role of
Dopant Atoms in Grain ...
When the dopant is within 7.0 Å, there does appear to be a trend between EGB
and εββ . For values of εββ below 1.0, EGB drops below that of pure Cu. For
values of εββ above 1.0, the grain boundary energy becomes greater than that of
pure ...
Paul Christopher Millett,
2006
5
The
dopant density and temperature dependence of electron ...
function of dopant density for n-type silicon for 10 1 3 <_ Np <_ 10 1 9 cm-3, and
100 <_ T <_ 500 K. The resistivity is calculated from the expression P — (3.16)
qnyn If both p and n are measured independently, then the electron mobility may
...
6
Proceedings of the Symposium on Diagnostic Techniques for ...
At this point, it is instructive to consider the average dopant spacing and average
number of dopant atoms within a given analysis volume at these spatial and
concentration resolution levels (see Figure 4.) The average dopant spacing is ...
Dieter K. Schroder, Janet L. Benton, P. Rai-Choudhury,
1994
7
Istfa 2003: Proceedings of the 29Th International Symposium ...
Several assumptions are implicit in the calibration curve approach: Figure 2:
Schematic illustration of the calibration curve method for dopant profile extraction
from SCM images as implemented by the FASTC2D program. SCM data (upper
left) ...
8
Ionized
dopant concentrations at the heavily doped surface ...
SUMMARY The metal-oxide -semiconductor (MOS) capacitance-voltage
technique is used to determine ionized dopant concentrations at the heavily
doped (n+) surface of a silicon solar cell. These data are combined with
concentrations ...
Lewis Research Center, Irving Weinberg, United States. National Aeronautics and Space Administration. Scientific and Technical Information Office,
1978
9
Solid Oxide Fuel Cells IX (SOFC-IX) : proceedings of the ...
ELASTIC. DRIVING. FORCES. FOR. DOPANT. SEGREGATION. IN.
NANOSTRUCTURED. DOPED. ZIRCONIA. CERAMICS. E. Djurado l\ F. Boulc'hu
2), P. Bouvier " ''Laboratoire d'Electrochimie et de Physico-chimie des Materiaux
et des ...
S. C. Singhal, International Symposium on Solid Oxide Fuel Cells,
2005
10
Microscopy of Semiconducting Materials 2007: Proceedings of ...
Quantitative. Dopant. Profiling. in. the. SEM. Including. Surface. States. K W A
Chee, C Rodenburg1 and C J Humphreys University of Cambridge, Department
of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, UK
1 ...
A. G. Cullis, P. A. Midgley,
2008
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Optimizing Experimental Conditions for STED and g-STED Microscopy
The fluorescent molecule dopant concentration is chosen to be 3.1 × 1016 molecules/cm3, the S(0)-to-S(1) 1PA absorption cross section is 1.0 × 10-17 cm2, the ... «Photonics.com, 7月 15»
Coventor Releases SEMulator3D 5.0
Along with these dopant-modeling capabilities come new dopant concentration visualization features in the SEMulator3D Viewer. Additional ... «NCTechNews, 7月 15»
Pomegranates are good for your renewable energy systems
"This is the most crucial issue as the nitrogen dopant and topology-induced defects of graphene tend to adsorb and anchor metal precursor and ... «Nanowerk, 7月 15»
Pomegranate-like nanocomposites: The new avenue of graphene in …
"The nitrogen dopant and topology-induced defects of graphene contribute to the adsorption and anchor of metal cations and then the in-plane ... «Phys.Org, 6月 15»
Pre- Market News Review: Axcelis Technologies (NASDAQ:ACLS …
... and angle control system, and constant focal length scanning deliver the most precise and repeatable dopant placement accessible recently. «wsnewspublishers, 6月 15»
A Review of the Opportunities and Processes for Printed Electronics …
These have optimized silicon particle size and dopant concentration to maximize the conversion efficiency of photovoltaic (PV) cells. The ink is ... «I-Connect007, 6月 15»
Axcelis Wins Multi System Follow On Order For 'Purion XE' High …
... and constant focal length scanning deliver the most precise and repeatable dopant placement available today. The platform's superior beam ... «CNNMoney, 6月 15»
Leading US funds invest USD 22 million in Thinfilm
Proceeds from the Private Placement will fund an expansion of Thinfilm's PDPS (printed dopant polysilicon) manufacturing at its facility in San ... «Printed Electronics World, 6月 15»
Park Systems Invites SEMICON West Attendees and Customers to a …
... nanoscale spatial resolution but also with electrical sensitivity that can differentiate a wide range of dopant concentration across 7 decades. «PR Web, 6月 15»
BRIEF-US funds invest $22 million in Thin Film Electronics
Proceeds from private placement will fund an expansion of Thinfilm's PDPS (printed dopant polysilicon) manufacturing at its facility in San Jose, ... «Reuters, 6月 15»