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ガリウム砒素ショットキーダイオード 金・ニッケル・タングステン・モリブデン・バナジウムなどの金属の薄い膜をつくりショートキー型の障壁を形成させたダイオードでガリウム砒素の半導体基板上に真空蒸着（眞空蒸着）・電気メッキ、化合物からの分解等の方法により作る 。 マイクロ波・ミリ波の小信号発振装置と検波・ミキサー・パラメトゥロン用装置に使われる。
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1
Semiconductor Device Physics and Design - 241페이지
Problem 5.8 The capacitance of a Pt-n-type GaAs Schottky diode is given by 1 (C(μF)) 2 The diode area is 0.1 cm2. Calculate the built-in voltage Vbi, the barrier height, and the doping concentration. = 1.0 × 105 − 2.0 × 105 V Problem 5.9 ...
Umesh Mishra, Jasprit Singh,
2007
2
Fabrication of GaAs Devices - 225페이지
As previously noted, gate sinking will result in a reduction in drain current for an FET, and it will result in a change in either the Schottky barrier height (<f>t>), the ideality factor (n) or the doping level for a Schottky diode. TiPtAu gates have been ...
Albert G. Baca, Carroll I. H. Ashby, Institution of Electrical Engineers,
2005
3
Control Components Using Si, GaAs, and GaN Technologies:
Consider the input power level Pa = 5 W and R s = 1 Ω, the total power dissipated PD in the limiter diodes is about 0.31W. If Rth is 120°C/W of the diode on the GaAs substrate placed on a heat sink, the increase in diode junction temperature is ...
4
Advances in Broadband Communication and Networks - 98페이지
The chapter authors have earlier summarized their own experience with resistive GaAs pHEMT mixers [30] as yielding larger bandwidths at the expense of lower conversion gains compared to GaAs Schottky diode mixers. Reference [16] also ...
Johnson I. Agbinya, Oya Sevimli, Sam Reisenfeld,
2008
5
GaAs Microelectronics: VLSI Electronics Microstructure Science
IMPATT Diodes The IMPATT diode, like the Gunn diode, is a negative resistance device. The mechanism is entirely different, however. The basic IMPATT diode consists of a Schottky barrier or p-n junction reverse biased into avalanche ...
Norman G. Einspruch, William R. Wisseman,
2014
6
GaAs and Related Materials: Bulk Semiconducting and ... - 311페이지
They have concluded that the annealing-induced changes in the diode characteristics can be attributed to a shift in the interface Fermi level pinning position and not to the formation of an AlGaAs interface layer. The (OOl)GaAs surface has a ...
7
Semiconductor Devices and Integrated Electronics - 132페이지
Hsu, S.T., “Flicker noise in metal semiconductor Schottky barrier diodes due to multistep tunneling processes,” IEEE Trans. Electron Devices, ED-18, 1971, p. 882. Huang, C.I., and S.S. Li, “Reverse I-V characteristics in Au-GaAs Schottky diode ...
8
Frontiers in Electronics: Future Chips : Proceedings of ... - 263페이지
Simulation results have revealed a dramatic influence on the second harmonic power of the Schottky diode at the transverse polar-optical frequency and in the vicinity of one-half of the transverse polar-optical frequency. The transverse ...
Yoon-Soo Park, Michael Shur, William Tang,
2002
9
Fundamentals Of Semicon Dev - 499페이지
Solution: (i) Silicon Schottky Barrier Diode: For silicon, — - = 0.6. Hence substituting in the Eqn (10.38), we obtain. A* = 72 A/cm2/( degree kelvin) . mo Considering the situation with large values of Dir the Fermi level is pinned to VV0 and ...
10
Radio Engineering for Wireless Communication and Sensor ...
Antti V. R ̈ais ̈anen, Arto Lehto. charge is suddenly released when the bias is reversed: A short reverse current pulse is generated. This extremely nonlinear behavior is utilized in the step- recovery diode, which is used in frequency ...
Antti V. R ̈ais ̈anen, Arto Lehto,
2003