CE ÎNSEAMNĂ 저마늄다이오드 ÎN COREEANĂ?
Definiția 저마늄다이오드 în dicționarul Coreeană
Diodele germane A fost o diodă semiconductoare care folosea germaniul ca material și a devenit un indiciu pentru apariția diferitelor dispozitive semiconductoare care înlocuiesc tubul de electroni, contribuind în mod special la invenția tranzistorului. În funcție de aplicație și de performanță, există diode de contact cu puncte, diode de joncțiune și așa mai departe.
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1
Germanium-Based Technologies: From Materials to Devices
Using the singlemask lay-out of Figure 8.8, one can obtain a gated diode, using the same gate dielectric as for the fabrication of MOS capacitors present on the same mask. The resulting p–n junctions exhibit good characteristics, as can be ...
Cor Claeys, Eddy Simoen,
2011
2
Measurement of Weak Radioactivity - 117페이지
intrinsic carrier free region created by depletion of charge carriers when a reverse bias is applied to the diode. The higher the reverse bias is, the thicker the radiation sensitive depletion layer will become. When an energetic particle passes ...
3
DC/AC Circuits and Electronics: Principles & Applications - 125페이지
This barrier voltage and the actual forward bias voltage drop of a diode depend upon the material and construction of the diode. The barrier potential and the actual voltage drop in a live circuit of a germanium diode is about 0.2 Fand a silicon ...
4
Germanium-diode Negative-resistance Oscillators - 6페이지
Frederick Albert Kirsten. PART II : NEGATIVE-RTSTSTANCE PROPERTIES OF GERMANIUM DIODES. A. Electrical characteristics. Germanium diodes, operated in the reverse or back voltage direction possess an electrical characteristic of the ...
Frederick Albert Kirsten,
1952
5
Silicon Germanium Materials & Devices - A Market & ... - 121페이지
To a large extent the SiGe laser driver market will track that of diode lasers.With reference to the companion report, the market for these devices was worth US$ 5.7 billion in 2001. So from this it is a useful approximation to expect that the ...
6
Improved infrared response technique for detecting defects ... - 4페이지
That the above photovoltage effects are responsible for the diode IRR is supported by the following observations made on germanium diodes [6,9] and confirmed in work with silicon. Firstly, no spectral features that can be linked to impurity or ...
Alvin H. Sher, U.S. Atomic Energy Commission,
1975
7
BASIC ELECTRONICS: DEVICES, CIRCUITS AND IT FUNDAMENTALS
The reverse-bias saturation current for a p-n junction silicon diode is 2 uA at 300 K. Find its ac resistance at 150 mV forward bias. 17. Calculate the static and dynamic resistance of a p-n junction germanium diode at 27°C for an applied forward ...
8
Lithium-Drifted Germanium Detectors: Their Fabrication and ...
Blankenship, J. L. and Borkowski, C. J. IMPROVED TECHNIQUES FOR MAKING P-I-N DIODE DETECTORS. IRE Trans. Nucl. ... A controlled quantity of lithium was diffused through a l- to 2-micron phosphorus-doped layer on the silicon diode.
9
Germanium diodes - 17페이지
GENERAL PROPERTIES OF THE GERMANIUM DIODE, COMPARED WITH THOSE OF THE THERMIONIC DIODE In comparison with the thermionic diode, the germanium diode has the following advantages: 1 . The absence of a filament is ...
10
Semiconductor Devices & Circuits - 174페이지
For a what voltage, will the reverse current in a p-n junction germanium diode reach 90 percent of its saturation value at room temperature. (Dec-2002) 2.9 1. A p-n junction diode has at a temperature of 125 °C a reverse saturation current of 30 ...
U.A.Bakshi A.P.Godse,
2008