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III-Nitride Semiconductors: Optical Properties - Tom 1 - Strona 245
R. Stepniewski, A. Wysmolek, I. Gr/egoty, J. Jun. M Sawicki, S. Porowski. and K.Starowieyski,Acta/VivJ. /W., 88, 861 (1995). 2. S. Porowski, J. Jun. M. Bo^kowski, M. Les/c/yrtski, S. Krukowski, M. Wroblewski. B. Luc/nik, and I. Gr/egory, Proc. of ...
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Oxide and Nitride Semiconductors: Processing, Properties, and ...
R. Stepniewski, K.P. Korona, A. Wysmolek, J.M. Baranowski, K. Pakula, M. Potemski, G. Martinez, I. Grzegory, S. Porowski, Phys. Rev. B 56, 15151 (1997) 32. A.V. Rodina, M. Dietrich, A. G ̈oldner, L. Eckey, A. Hoffmann, Al. L. Efros, M. Rosen, ...
Takafumi Yao, Soon-Ku Hong, 2009
3
Handbook of Nitride Semiconductors and Devices, Electronic and ...
Baranowski, J.M., Liliental-Weber, Z., Korona, K., Pakula, K., Stepniewski, R., Wysmolek, A., Grzegory, I., Nowak, G., Porowski, S., Monemar, B. and Bergman, P. (1997) III–V Nitrides, vol. 449 (eds F.A. Ponce, T.D. Moustakas, I. Akasaki and B.
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Ultrafast Phenomena in Semiconductors - Tom 4280 - Strona 19
R. Stepniewski, K. P. Korona, A. Wysmolek, J. M. Baranowski, K. Pakula, M. Potemski, G. Martinez, I. Grzegory. S. Porowski, "Polariton effects in reflectance and emission spectra of homoepitaxial GaN", Phys. Rev. B56, 15151 (1997) 4. D. Volm ...
Hongxing Jiang, Kong Thon Tsen, Jin-Joo Song, 2001
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III-Nitride Semiconductors: Electrical, Structural and Defects ...
K. Pakula, A. Wysmolek, K.P. Korona, J.M. Baranowski, R. Stepniewski, I. Gregory, M. Bockowski, J. Jun, S. Krukowski, M. Wroblewski and S. Porowski, Solid State Commun. 97, 919 (1996). N.V. Edwards, M.D. Bremser, T.W. Weeks, Jr., R.S. ...
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Homoepitaxial Growth of Gallium Nitride and Aluminum Nitride and Its ...
168 R. Stepniewski, A. Wysmolek, M. Potemski, J. Lusakowski, K. Korona, K. Pakula, J.M. Baranowski, G. Martinez, P. Wyder, I. Grzegory, and S. Porowski, phys. stat. sol. (b) 210 (1998) 373. 169 A. Wysmolek, M. Potemski, R. Stepniewski, ...
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Nitride semiconductors: symposium held December 1-5, 1997, Boston, ...
REFERENCES [I] K. Pakula, A. Wysmolek, K. P. Korona, J M. Baranowski, R. Stepniewski, L Grzegory, B. Lucznik, M. Wroblewski, S. Porowski, Solid State Commun. 97, p. 919 (1996) [2] J. M. Baranowski, S. Porowski, Proc. 23rd Int. Conf. Phys ...
Fernando A. Ponce, Materials Research Society. Meeting, 1998
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GaN and Related Alloys - 2003: - Tom 798 - Strona 574
T. Laine, S. Kuisma, J. Nissila, P. Hautojarvi, L. Dobrzynski, J. M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory and S. Porowski, Phys. Rev. Lett. 79. 3030 (1997) 19. B. Monemar, Journal ...
Hock Min Ng, Michael Wraback, Kazumasa Hiramatsu, 2004
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Graphene Quantum Dots - Strona 26
9, 49 (2013) J. Borysiuk, R. BoZek, W. Strupir'lski, A. Wysmolek, K. Grodecki, R. Stepniewski, J.M. Baranowski, J. Appl. Phys. 105, 023503 (2009) J. Krupka, W. Strupir'lski, Appl. Phys. Lett. 96, 082101 (2010) W. Strupinski, K. Grodecki, ...
Alev Devrim Güçlü, Pawel Potasz, Marek Korkusinski, 2014
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Optics of Semiconductors and Their Nanostructures - Strona 104
... E.R. Weber, (Academic Press, San Diego 1998 and 1999) J.A. Freitas, W.J. Moore, B.V. Shanabrook, G.C.B. Braga, S.K. Lee, S.S. Park, J.Y. Han: Phys. Rev. B 66, 233311 (2002) A. Wysmolek, K.P. Korona, R. Stepniewski, J.M. Baranowski, ...
Heinz Kalt, Michael Hetterich, 2013
