ЧТО ОЗНАЧАЕТ СЛОВО ÎNTISÍ
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исходное определение слова «întisí» в словаре румынский языка.
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Значение слова întisí в словаре румынский языка
intisí, intisésc, vb. IV (инв.) Чтобы вздохнуть, рассвет, сдержать, привить. întisí, întisésc, vb. IV (înv.) a sili, a zori, a constrânge, a întiști.
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КНИГИ НА РУМЫНСКИЙ ЯЗЫКЕ, ИМЕЮЩЕЕ ОТНОШЕНИЕ К СЛОВУ «ÎNTISÍ»
Поиск случаев использования слова
întisí в следующих библиографических источниках. Книги, относящиеся к слову
întisí, и краткие выдержки из этих книг для получения представления о контексте использования этого слова в литературе на румынский языке.
1
Laser Surface Engineering: Processes and Applications - Pagina 516
The extent of wear is minimum in Ti(Si) and maximum in pure Ti. In as-received Ti, the steady state wear is followed by a gradual decrease in the m value with an increase in tsc. On the other hand, wear in Ti(Si) undergoes a low friction event ...
Jonathan R. Lawrence, D Waugh, 2014
2
Swift Heavy Ions for Materials Engineering and Nanostructuring
Mixing in Ti/Si, Ni/Si, Mn/Si, Mo/Si and W/Si Nickel and titanium silicides are of interest for ohmic contact in semiconductors. Different phases of silicides are made in Ti/Si and Ni/Si systems depending on the temperature and the ratio of the ...
Devesh Kumar Avasthi, Girijesh Kumar Mehta, 2011
3
New Perspectives on Historical Latin Syntax: Constituent ... - Pagina 115
Some are still synchronically fully retrievable, like partim 'partly' from pars 'part' (whose Classical Latin accusative form is partem); many can be related to unattested but reconstructable Proto-Indo-European dever- bal nouns in -ti/-si, like ...
Philip Baldi, Pierluigi Cuzzolin, 2010
4
Novel Nanocomposite Coatings: Advances and Industrial ...
4.11, an empirical model for phase formation in Ti-Si-N system proposed by Vaz et al. is given [61]. It is assumed that low deposition temperatures and an absence of the ion bombardment do not provide necessary atom mobility at the surface ...
Rostislav Daniel, Jindřich Musil, 2014
5
Parallel Algorithms and Cluster Computing: ... - Pagina 253
... of the stability of the NiSi2/Si(111) interface. Phys. Rev. B, 57:8801, 1998. B. Chenevier, O. Chaix-Pluchery, P. Gergaud, O. Thomas, F. La Via. Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films.
Karl Heinz Hoffmann, Arnd Meyer, 2007
6
Innovative Processing and Synthesis of Ceramics, Glasses, ...
SHOCK REACTIVE SYNTHESIS IN Ti-Si SYSTEM The refining and alloying processes during mechanical alloying in Ti-Si system are discussed in the following. As discussed in Reft. (12,15), the chemical composition of Si was widely varied ...
Narottam P. Bansal, Kathryn V. Logan, Jitendra Prasad Singh, 1997
7
1985 proceedings - Pagina 365
Again, we nave determined only tne etcn rate in Ti , Si, and Ti Si 2 » and not in intermediate pnases. However, unlike tne sensitivity factors, tne etcn rates in Ti Si 2 , Ti , and Si are quite similar, so tnat presumably tney are also not too different ...
IEEE Electron Devices Society, IEEE Components, Hybrids, and Manufacturing Technology Society, 1985
8
High-performance Ceramics: Proceedings of the ... China ...
In this work, the effect of amorphous silicon carbide phase in Ti-Si-C coatings during deposition process was investigated using various instrumental analyses of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ...
Wei Pan, Jianghong Gong, 2007
9
Multilayers: Volume 103: Synthesis, Properties and ... - Pagina 227
The extent of SPA was largest in Ti-Si reactions and smallest in V-Si. When the experiment was repeated with much thicker Si/M/Si films (300/100- 1000/300 A), the amorphous region reached a few hundred angstroms in the Tl-Si couples, but ...
T. W. Barbee, F. Spaepen, L. Greer, 1988
10
Shear localization in high-strain-rate deformation of ... - Pagina x
... Figure 4.22 Microstructure in Ti-Si mixture after densification stage (explosive 1). 106 Figure 4.23 Microstructure in Ti-Si mixture at eeff ~ 0.24 (a) typical area; (b) shear flow regions 107 Figure 4.24 Shear band structure in Ti-Si mixture at eeff X.
Hsi-Ching Bryan Chen, 1997
