WAS BEDEUTET ÎNTISÍ AUF RUMÄNISCH
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Definition von întisí im Wörterbuch Rumänisch
intisí, intisésc, vb. IV (inv.) Zu zwingen, zu dämmern, zu zügeln, zu initiieren. întisí, întisésc, vb. IV (înv.) a sili, a zori, a constrânge, a întiști.
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10 BÜCHER, DIE MIT «ÎNTISÍ» IM ZUSAMMENHANG STEHEN
Entdecke den Gebrauch von
întisí in der folgenden bibliographischen Auswahl. Bücher, die mit
întisí im Zusammenhang stehen und kurze Auszüge derselben, um seinen Gebrauch in der Literatur kontextbezogen darzustellen.
1
Laser Surface Engineering: Processes and Applications - Pagina 516
The extent of wear is minimum in Ti(Si) and maximum in pure Ti. In as-received Ti, the steady state wear is followed by a gradual decrease in the m value with an increase in tsc. On the other hand, wear in Ti(Si) undergoes a low friction event ...
Jonathan R. Lawrence, D Waugh, 2014
2
Swift Heavy Ions for Materials Engineering and Nanostructuring
Mixing in Ti/Si, Ni/Si, Mn/Si, Mo/Si and W/Si Nickel and titanium silicides are of interest for ohmic contact in semiconductors. Different phases of silicides are made in Ti/Si and Ni/Si systems depending on the temperature and the ratio of the ...
Devesh Kumar Avasthi, Girijesh Kumar Mehta, 2011
3
New Perspectives on Historical Latin Syntax: Constituent ... - Pagina 115
Some are still synchronically fully retrievable, like partim 'partly' from pars 'part' (whose Classical Latin accusative form is partem); many can be related to unattested but reconstructable Proto-Indo-European dever- bal nouns in -ti/-si, like ...
Philip Baldi, Pierluigi Cuzzolin, 2010
4
Novel Nanocomposite Coatings: Advances and Industrial ...
4.11, an empirical model for phase formation in Ti-Si-N system proposed by Vaz et al. is given [61]. It is assumed that low deposition temperatures and an absence of the ion bombardment do not provide necessary atom mobility at the surface ...
Rostislav Daniel, Jindřich Musil, 2014
5
Parallel Algorithms and Cluster Computing: ... - Pagina 253
... of the stability of the NiSi2/Si(111) interface. Phys. Rev. B, 57:8801, 1998. B. Chenevier, O. Chaix-Pluchery, P. Gergaud, O. Thomas, F. La Via. Thermal expansion and stress development in the first stages of silicidation in Ti/Si thin films.
Karl Heinz Hoffmann, Arnd Meyer, 2007
6
Innovative Processing and Synthesis of Ceramics, Glasses, ...
SHOCK REACTIVE SYNTHESIS IN Ti-Si SYSTEM The refining and alloying processes during mechanical alloying in Ti-Si system are discussed in the following. As discussed in Reft. (12,15), the chemical composition of Si was widely varied ...
Narottam P. Bansal, Kathryn V. Logan, Jitendra Prasad Singh, 1997
7
1985 proceedings - Pagina 365
Again, we nave determined only tne etcn rate in Ti , Si, and Ti Si 2 » and not in intermediate pnases. However, unlike tne sensitivity factors, tne etcn rates in Ti Si 2 , Ti , and Si are quite similar, so tnat presumably tney are also not too different ...
IEEE Electron Devices Society, IEEE Components, Hybrids, and Manufacturing Technology Society, 1985
8
High-performance Ceramics: Proceedings of the ... China ...
In this work, the effect of amorphous silicon carbide phase in Ti-Si-C coatings during deposition process was investigated using various instrumental analyses of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ...
Wei Pan, Jianghong Gong, 2007
9
Multilayers: Volume 103: Synthesis, Properties and ... - Pagina 227
The extent of SPA was largest in Ti-Si reactions and smallest in V-Si. When the experiment was repeated with much thicker Si/M/Si films (300/100- 1000/300 A), the amorphous region reached a few hundred angstroms in the Tl-Si couples, but ...
T. W. Barbee, F. Spaepen, L. Greer, 1988
10
Shear localization in high-strain-rate deformation of ... - Pagina x
... Figure 4.22 Microstructure in Ti-Si mixture after densification stage (explosive 1). 106 Figure 4.23 Microstructure in Ti-Si mixture at eeff ~ 0.24 (a) typical area; (b) shear flow regions 107 Figure 4.24 Shear band structure in Ti-Si mixture at eeff X.
Hsi-Ching Bryan Chen, 1997
